High performance amine based no-flow underfill materials for...

Details High performance amine based no-flow underfill materials for... High performance amine based no-flow underfill materials for...

2007-10-09

2007-10-09

Vu, Hung (Department: 2811)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Assembly of plural semiconductive substrates each possessing...

C438S127000

Reexamination Certificate

active

10949995

ABSTRACT:
Amine-based no-flow underfill materials and a method to produce flip-chip devices electrically bonded to a substrate are described. The no-flow underfill material includes an amine-based curing agent and a fluxing agent, which activates at a fluxing temperature and is neutral at the temperatures lower than the fluxing temperature. The fluxing agent of the no-flow underfill material heated to the activation temperature generates a reactive acid in-situ during chip attachment process to facilitate joint formation. The no-flow underfill material is formed on the substrate. A chip is placed on the no-flow underfill material formed on the substrate. A temperature is increased to activate the fluxing agent. The temperature is further increased to form conductive joints between the chip and the substrate. Further, the no-flow underfill material is cured. The conductive joints between the chip and the substrate may be lead-free.

REFERENCES:
patent: 5985043 (1999-11-01), Zhou et al.
patent: 6667194 (2003-12-01), Crane et al.

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