Static information storage and retrieval – Systems using particular element – Magnetic thin film
Reexamination Certificate
2006-09-05
2006-09-05
Phung, Anh (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetic thin film
C365S158000, C365S171000
Reexamination Certificate
active
07102923
ABSTRACT:
A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.
REFERENCES:
patent: 6285581 (2001-09-01), Tehrani et al.
patent: 6567299 (2003-05-01), Kunikiyo et al.
patent: 6611405 (2003-08-01), Inomata et al.
patent: 6728132 (2004-04-01), Deak
patent: 6807091 (2004-10-01), Saito
patent: 6847547 (2005-01-01), Albert et al.
T. Miyazaki and N. Tezuka, “Giant Magnetic Tunneling Effect in Fe/Al2O3/Fe Junction”, Journal of Magnetism and Magnetic Materials 139 (1995), pp. L231-L234.
F. J. Albert, J.A. Katine, R.A. Buhrman, and D.C. Ralph, “Spin-Polarized Current Switching of a Co Thin Film Nanomagnet”, Applied Physics Letters, vol. 77, No. 23, (Dec. 4, 2000), pp. 3809-3811.
Y. Ohno, D.K. Young and B. Beschoten, F. Matsukura, H, Ohno and D. D. Awschalom, “Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure”, Nature, vol. 402 (Dec. 16, 1999), pp. 790-792.
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Nguyen Hien N
Phung Anh
Reed Smith LLP
LandOfFree
High output nonvolatile magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High output nonvolatile magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High output nonvolatile magnetic memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3619894