High output nonvolatile magnetic memory

Details High output nonvolatile magnetic memory High output nonvolatile magnetic memory

2005-01-11

2005-01-11

Lebentritt, Michael S. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S158000, C365S171000

Reexamination Certificate

active

06842368

ABSTRACT:
A magnetic memory is provided with a high-output memory cell capable of switching and magnetization reversal operations by means of two terminals. There is formed an MIS junction laminated layer comprising a diode, a spin transfer torque magnetization reversal induction layer, and a tunnel magnetoresistive device. A bit line and a word line are connected to the laminated layer.

REFERENCES:
patent: 6285581 (2001-09-01), Tehrani et al.
patent: 6567299 (2003-05-01), Kunikiyo et al.
patent: 6611405 (2003-08-01), Inomata et al.
T. Miyazaki and N. Tezuka, “Giant Magnetic Tunneling Effect in Fe/Al2O3/Fe Junction”, Journal of Magnetism and Magnetic Materials 139 (1995), pp. L231-L234.
F. J. Albert, J.A. Katine, R.A. Buhrman, and D.C. Ralph, “Spin-Polarized Current Switching of a Co Thin Film Nanomagnet”, Applied Physics Letters, vol. 77, No. 23, (Dec. 4, 2000), pp. 3809-3811.
Y. Ohno, D.K. Young, B. Beschoten, F. Matsukura, H, Ohno and D. D. Awshalom, “Electrical Spin Injection in a Ferromagnetic Semiconductor Heterostructure”, Nature, vol. 402 (Dec. 16, 1999), pp. 790-792.

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