High mobility transistors in SOI and method for forming

Details High mobility transistors in SOI and method for forming High mobility transistors in SOI and method for forming

2005-11-08

2005-11-08

Cao, Phat X. (Department: 2814)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000

Reexamination Certificate

active

06962838

ABSTRACT:
The present invention provides a device design and method for forming Field Effect Transistors (FETs) that have improved performance without negative impacts to device density. The present invention forms high-gain p-channel transistors by forming them on silicon islands where hole mobility has been increased. The hole mobility is increased by applying physical straining to the silicon islands. By straining the silicon islands, the hole mobility is increased resulting in increased device gain. This is accomplished without requiring an increase in the size of the devices, or the size of the contacts to the devices.

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