High mobility plane CMOS SOI

Details High mobility plane CMOS SOI High mobility plane CMOS SOI

2006-02-14

2006-02-14

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S401000, C257S627000

Reexamination Certificate

active

06998684

ABSTRACT:
Disclosed is an integrated circuit structure that has a substrate having at least two types of crystalline orientations. First-type transistors (e.g., NFETs) are formed on first portions of the substrate having a first type of crystalline orientation, and second-type transistors (e.g., PFETs) are formed on second portions of the substrate having a second type of crystalline orientation. Some of the first portions of the substrate comprise non-floating substrate portions, and the remaining ones of the first portions and all of the second portions of the substrate comprise floating substrate portions.

REFERENCES:
patent: 4933298 (1990-06-01), Hasegawa
patent: 6657223 (2003-12-01), Wang et al.
patent: 6657259 (2003-12-01), Fried et al.
patent: 6794718 (2004-09-01), Nowak et al.
patent: 2004/0195623 (2004-10-01), Ge et al.
patent: 2004/0195646 (2004-10-01), Yeo et al.

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