High mobility CMOS circuits

Details High mobility CMOS circuits High mobility CMOS circuits

2007-10-23

2007-10-23

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S368000, C257S369000, C257S635000, C257S637000, C438S153000, C438S157000, C438S197000

Reexamination Certificate

active

11244291

ABSTRACT:
Semiconductor structure formed on a substrate and process of forming the semiconductor. The semiconductor includes a plurality of field effect transistors having a first portion of field effect transistors (FETS) and a second portion of field effect transistors. A first stress layer has a first thickness and is configured to impart a first determined stress to the first portion of the plurality of field effect transistors. A second stress layer has a second thickness and is configured to impart a second determined stress to the second portion of the plurality of field effect transistors.

REFERENCES:
patent: 3602841 (1971-08-01), McGroddy
patent: 4665415 (1987-05-01), Esaki et al.
patent: 4853076 (1989-08-01), Tsaur et al.
patent: 4855245 (1989-08-01), Neppl et al.
patent: 4952524 (1990-08-01), Lee et al.
patent: 4958213 (1990-09-01), Eklund et al.
patent: 5006913 (1991-04-01), Sugahara et al.
patent: 5060030 (1991-10-01), Hoke
patent: 5081513 (1992-01-01), Jackson et al.
patent: 5108843 (1992-04-01), Ohtaka et al.
patent: 5134085 (1992-07-01), Gilgen et al.
patent: 5310446 (1994-05-01), Konishi et al.
patent: 5354695 (1994-10-01), Leedy
patent: 5371399 (1994-12-01), Burroughes et al.
patent: 5391510 (1995-02-01), Hsu et al.
patent: 5459346 (1995-10-01), Asakawa et al.
patent: 5471948 (1995-12-01), Burroughes et al.
patent: 5557122 (1996-09-01), Shrivastava et al.
patent: 5561302 (1996-10-01), Candelaria
patent: 5565697 (1996-10-01), Asakawa et al.
patent: 5571741 (1996-11-01), Leedy
patent: 5592007 (1997-01-01), Leedy
patent: 5592018 (1997-01-01), Leedy
patent: 5670798 (1997-09-01), Schetzina
patent: 5679965 (1997-10-01), Schetzina
patent: 5683934 (1997-11-01), Candelaria
patent: 5840593 (1998-11-01), Leedy
patent: 5861651 (1999-01-01), Brasen et al.
patent: 5880040 (1999-03-01), Sun et al.
patent: 5940736 (1999-08-01), Brady et al.
patent: 5946559 (1999-08-01), Leedy
patent: 5960297 (1999-09-01), Saki
patent: 5989978 (1999-11-01), Peidous
patent: 6008126 (1999-12-01), Leedy
patent: 6025280 (2000-02-01), Brady et al.
patent: 6046464 (2000-04-01), Schetzina
patent: 6066545 (2000-05-01), Dishi et al.
patent: 6090684 (2000-07-01), Ishitsuka et al.
patent: 6107143 (2000-08-01), Park et al.
patent: 6117722 (2000-09-01), Wuu et al.
patent: 6133071 (2000-10-01), Nagai
patent: 6165383 (2000-12-01), Chou
patent: 6221735 (2001-04-01), Manley et al.
patent: 6228694 (2001-05-01), Doyle et al.
patent: 6235574 (2001-05-01), Tobben et al.
patent: 6246095 (2001-06-01), Brady et al.
patent: 6255169 (2001-07-01), Li et al.
patent: 6261964 (2001-07-01), Wu et al.
patent: 6265317 (2001-07-01), Chiu et al.
patent: 6274444 (2001-08-01), Wang
patent: 6281532 (2001-08-01), Doyle et al.
patent: 6284623 (2001-09-01), Zhang et al.
patent: 6284626 (2001-09-01), Kim
patent: 6319794 (2001-11-01), Akatsu et al.
patent: 6361885 (2002-03-01), Chou
patent: 6362082 (2002-03-01), Doyle et al.
patent: 6368931 (2002-04-01), Kuhn et al.
patent: 6403486 (2002-06-01), Lou
patent: 6403975 (2002-06-01), Brunner et al.
patent: 6406973 (2002-06-01), Lee
patent: 6461936 (2002-10-01), Von Ehrenwall
patent: 6476462 (2002-11-01), Shimizu et al.
patent: 6483154 (2002-11-01), Ngo et al.
patent: 6483171 (2002-11-01), Forbes et al.
patent: 6493497 (2002-12-01), Ramdani et al.
patent: 6498358 (2002-12-01), Lach et al.
patent: 6501121 (2002-12-01), Yu et al.
patent: 6506652 (2003-01-01), Jan et al.
patent: 6509618 (2003-01-01), Jan et al.
patent: 6521964 (2003-02-01), Jan et al.
patent: 6531369 (2003-03-01), Ozkan et al.
patent: 6531740 (2003-03-01), Bosco et al.
patent: 6573172 (2003-06-01), En et al.
patent: 6717216 (2004-04-01), Doris et al.
patent: 6825529 (2004-11-01), Chidambarrao et al.
patent: 6831292 (2004-12-01), Currie et al.
patent: 6974981 (2005-12-01), Chidambarrao et al.
patent: 6977194 (2005-12-01), Belyansky et al.
patent: 7015082 (2006-03-01), Doris et al.
patent: 2001/0009784 (2001-07-01), Ma et al.
patent: 2002/0063292 (2002-05-01), Armstrong et al.
patent: 2002/0074598 (2002-06-01), Doyle et al.
patent: 2002/0086472 (2002-07-01), Roberds et al.
patent: 2002/0086497 (2002-07-01), Kwok
patent: 2002/0090791 (2002-07-01), Doyle et al.
patent: 2003/0032261 (2003-02-01), Yeh et al.
patent: 2003/0040158 (2003-02-01), Saitoh
patent: 2003/0057184 (2003-03-01), Yu et al.
patent: 2003/0067035 (2003-04-01), Tews et al.
patent: 2004/0135234 (2004-07-01), Morin et al.
patent: 2004/0238914 (2004-12-01), Deshpande et al.
patent: 2004/0262784 (2004-12-01), Doris et al.
patent: 2005/0040460 (2005-02-01), Chidambarrao et al.
patent: 2005/0082634 (2005-04-01), Doris et al.
patent: 2005/0093030 (2005-05-01), Doris et al.
patent: 2005/0098829 (2005-05-01), Doris et al.
patent: 2005/0106799 (2005-05-01), Doris et al.
patent: 2005/0145954 (2005-07-01), Zhu et al.
patent: 2005/0148146 (2005-07-01), Doris et al.
patent: 2005/0194699 (2005-09-01), Belyansky et al.
patent: 2005/0236668 (2005-10-01), Zhu et al.
patent: 2005/0245017 (2005-11-01), Belyansky et al.
patent: 2005/0280051 (2005-12-01), Chidambarrao et al.
patent: 2005/0282325 (2005-12-01), Belyansky et al.
patent: 2006/0027868 (2006-02-01), Doris et al.
patent: 2006/0057787 (2006-03-01), Doris et al.
patent: 2006/0060925 (2006-03-01), Doris et al.
patent: 64-76755 (1989-03-01), None
G. Zhang, et al., “A New ‘Mixed-Mode’ Reliability Degradation Mechanism in Advanced Si and SiGe Bipolar Transistors.” IEEE Transactions on Electron Devices, vol. 49, No. 12, Dec. 2002, pp. 2151-2156.
H.S. Momose, et al., “Temperature Dependence of Emitter-Base Reverse Stress Degradation and its Mechanism Analyzed by MOS Structures.” 1989 IEEE, Paper 6.2, pp. 140-143.
C.J. Huang, et al., “Temperature Dependence and Post-Stress Recovery of Hot Electron Degradation Effects in Bipolar Transistors.” IEEE 1991, Bipolar Circuits and Technology Meeting 7.5, pp. 170-173.
S.R. Sheng, et al., “Degradation and Recovery of SiGe HBTs Following Radiation and Hot-Carrier Stressing.” pp. 14-15.
Z. Yang, et al., “Avalanche Current Induced Hot Carrier Degradation in 200 GHz SiGe Heterojunction Bipolar Transistors.” pp. 1-5.
H. Li, et al., “Design of W-Band VCOs with High Output Power for Potential Application in 77 GHz Automotive Radar Systems.” 2003, IEEE GaAs Digest, pp. 263-266.
H. Wurzer, et al., “Annealing of Degraded non-Transistors-Mechanisms and Modeling.” IEEE Transactions on Electron Devices, vol. 41, No. 4, Apr. 1994, pp. 533-538.
B. Doyle, et al., “Recovery of Hot-Carrier Damage in Reoxidized Nitrided Oxide MOSFETs.” IEEE Electron Device Letters, vol. 13, No. 1, Jan. 1992, pp. 38-40.
H.S. Momose, et al., “Analysis of the Temperature Dependence of Hot-Carrier-Induced Degradation in Bipolar Transistors for Bi-CMOS.” IEEE Transactions on Electron Devices, vol. 41, No. 6, Jun. 1994, pp. 978-987.
M. Khater, et al., “SiGe HBT Technology with Fmax/Ft = 350/300 GHz and Gate Delay Below 3.3 ps”. 2004 IEEE, 4 pages.
J.C. Bean, et al., “GEx SI 1-x/Si Strained-Layer Superlattice Grown by Molecular Beam Epitaxy”. J. Vac. Sci. Technol. A 2(2), Apr.-Jun. 1984, pp. 436-440.
J.H. Van Der Merwe, “Regular Articles”. Journal of Applied Physics, vol. 34, No. 1, Jan. 1963, pp. 117-122.
J.W. Matthews, et al., “Defects in Epitaxial Multilayers”. Journal of Crystal Growth 27 (1974), pp. 118-125.
Subramanian S. Iyer, et al. “Heterojuction Bipolar Transistors Using Si—Ge Alloys”. IEEE Transactions on Electron Devices, vol. 36, No. 10, Oct. 1989, pp. 2043-2064.
R.H.M. Van De Leur, et al., “Critical Thickness for Pseudomorphic Growth of Si/Ge Alloys and Superlattices”. J. Appl. Phys. 64 (6), Sep. 15, 1988, pp. 3043-3050.
D.C. Houghton, et al., “Equilibrium Critical Thickness for SI 1-x GEx Strained Layers on (100) Si”. Appl. Phys. Lett. 56 (5), Jan 29, 1990, pp. 460-462.
Q. Quyang et al., “Two-Dimensional Bandgap Engineering in a Novel Si/SiGe pMOSFET with Enhanced Device Performance an

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