High mobility CMOS circuits

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S368000, C257S369000, C257S635000, C257S637000, C438S153000, C438S157000, C438S197000

Reexamination Certificate

active

11244291

ABSTRACT:
Semiconductor structure formed on a substrate and process of forming the semiconductor. The semiconductor includes a plurality of field effect transistors having a first portion of field effect transistors (FETS) and a second portion of field effect transistors. A first stress layer has a first thickness and is configured to impart a first determined stress to the first portion of the plurality of field effect transistors. A second stress layer has a second thickness and is configured to impart a second determined stress to the second portion of the plurality of field effect transistors.

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