Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1996-07-10
1999-03-02
Nguyen, Nam
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20429807, 20429809, 20429812, 20429819, C23C 1434
Patent
active
058765735
ABSTRACT:
A magnetron sputtering system is provided that uses cooling channels in the magnetron assembly to cool the target. The magnetron sputtering system also generates low pressure region in the magnetron assembly such that the backing plate sees a pressure differential much lower than atmospheric pressure. The backing plate is reduced in thickness and provides less of a barrier to the generated magnetic field.
REFERENCES:
patent: 3945911 (1976-03-01), McKelvey
patent: 4169031 (1979-09-01), Brors
patent: 4299678 (1981-11-01), Meckel
patent: 4361749 (1982-11-01), Lord
patent: 4444643 (1984-04-01), Garrett
patent: 4461688 (1984-07-01), Morrison, Jr.
patent: 4631106 (1986-12-01), Nakazato et al.
patent: 4673482 (1987-06-01), Setoyama et al.
patent: 4811687 (1989-03-01), Prince
patent: 4872964 (1989-10-01), Suzuki et al.
patent: 5079481 (1992-01-01), Moslehi
patent: 5082542 (1992-01-01), Moslehi et al.
patent: 5242566 (1993-09-01), Parker
patent: 5252194 (1993-10-01), Demaray et al.
patent: 5266178 (1993-11-01), Sichmann
patent: 5282947 (1994-02-01), Brugge et al.
patent: 5320728 (1994-06-01), Tepman
patent: 5328585 (1994-07-01), Stevenson et al.
patent: 5354443 (1994-10-01), Molslehi
patent: 5433835 (1995-07-01), Demaray et al.
patent: 5487822 (1996-01-01), Demaray et al.
patent: 5529627 (1996-06-01), Ocker et al.
patent: 5538609 (1996-07-01), Hinterschuster et al.
patent: 5565071 (1996-10-01), Demaray et al.
patent: 5628889 (1997-05-01), Gardell et al.
PCT International Search Report; Mailing Date Sep. 22, 1997.
PCT International Search Report; Mailing Date Dec. 31, 1996.
PCT International Search Report, Mailing Date Dec. 12, 1996.
Davis Cecil J.
Heimanson Dorian
Moslehi Mehrdad M.
Omstead Thomas R.
CVC, Inc.
McDonald Rodney G.
Nguyen Nam
LandOfFree
High magnetic flux cathode apparatus and method for high product does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High magnetic flux cathode apparatus and method for high product, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High magnetic flux cathode apparatus and method for high product will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-418694