High/low work function metal alloys for integrated circuit...

Details High/low work function metal alloys for integrated circuit... High/low work function metal alloys for integrated circuit...

2005-03-29

2005-03-29

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S412000, C257S768000

Reexamination Certificate

active

06873020

ABSTRACT:
Integrated circuit electrodes include an alloy of a first metal and a second metal having lower work function than the first metal. The second metal also may have higher oxygen affinity than the first metal. The first metal may be Ru, Ir, Os, Re and alloys thereof, and the second metal may be Ta, Nb, Al, Hf, Zr, La and alloys thereof. Both NMOS and the PMOS devices can include gate electrodes of an alloy of the first metal and the second metal having lower work function than the first metal. The PMOS gate electrode may have a higher percentage of the first metal relative to the second metal than the NMOS gate electrode. Thus, a common material system may be used for gate electrodes for both NMOS and PMOS devices.

REFERENCES:
patent: 3591838 (1971-07-01), Fujiwara et al.
patent: 6010584 (2000-01-01), Fonda et al.
patent: 6166417 (2000-12-01), Bai et al.
patent: 6376888 (2002-04-01), Tsunashima et al.
patent: 6458695 (2002-10-01), Lin et al.
patent: 6518106 (2003-02-01), Ngai et al.
patent: 6653698 (2003-11-01), Lee et al.
IBM TDB vol.31 No.3 Aug. 1988 pp 46-47 “Method for producing . . . Electrodes”.*
Ishii et al.,Work Function of Binary Alloys, Appl. Suf. Sci., vol. 169-170, Jan. 2001, pp. 658-661.
Misra et al.,Use of Metal-Oxide-Semiconductor Capacitors to Detect Interactions of Hf and Zr Gate Electrodes with SiO2and ZrO2, Applied Physics Letters, Jun. 25, 2001, pp. 4166-4168.
Zhong et al.,Properties of Ru-Ta Alloys as Gate Electrodes for NMOS and PMOS Silicon Devices, 2001 IEEE Electron Devices Meeting, IEDM Technical Digest International, Dec. 2001, pp. 20.5.1 -20.5.4.
Wuu et al,Material characteristics and thermal stability of cosputtered Ta-Ru thin films, J. Vac. Sci. Technol. A, vol. 17, No. 6, 1999, pp. 3327-3332.

Affiliated with

Also associated with

Rating

High/low work function metal alloys for integrated circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High/low work function metal alloys for integrated circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High/low work function metal alloys for integrated circuit... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3395323