High-K tunneling dielectric for read only memory device and...

Details High-K tunneling dielectric for read only memory device and... High-K tunneling dielectric for read only memory device and...

2006-03-07

2006-03-07

Guerrero, Maria F. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S314000, C257S315000, C257S316000, C257S324000

Reexamination Certificate

active

07009245

ABSTRACT:
A fabrication method for a read only memory device with a high dielectric constant tunneling dielectric layer, wherein this method provides forming a tunneling dielectric layer on a substrate, wherein the tunneling dielectric layer is formed with HfSiON or HfOxNy. An electron trapping layer and a top oxide layer are sequentially formed over the tunneling dielectric layer. Thereafter, the oxide layer, the electron trapping layer and the tunneling dielectric layer are patterned to form a plurality of stacked structures, followed by forming doped regions in the substrate between the stacked structures. Buried drain oxide layers are further formed over the surface of the doped regions, followed by forming a patterned conductive layer as the word line for the read only memory device.

REFERENCES:
patent: 5349221 (1994-09-01), Shimoji
patent: 6468865 (2002-10-01), Yang et al.
Kang et al. “Improved Thermal Stability and device performance of ultra-thin (EOT<10A) gate dielectric MOSFETs by using hafnium oxynitride (HfOxNy)”; Jun. 2002; IEEE, pp. 146-147.
Laaksonen et al. “Advanced CMOS transistors with a novel NfSiON gate dielectric”, Jun. 2002, IEEE, pp. 148-149.
Rotondaro et al. “Carrier mobility in MOSFETs fabricated with Hf-Si-O-N gate dielectric, polysilicon gate electrode, and self-aligned source and drain”; Oct. 2002, pp. 603-605.
Shanware et al. “Reliability evaluation of HfSiON gate dielectric film with 12.8 a SiO2 equivalent thickness”; Dec. 2001.

Affiliated with

Also associated with

Rating

High-K tunneling dielectric for read only memory device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-K tunneling dielectric for read only memory device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-K tunneling dielectric for read only memory device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3605097