High k gate insulator removal

Details High k gate insulator removal High k gate insulator removal

2003-04-14

2008-08-19

Ahmed, Shamim (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S689000, C438S369000, C438S694000, C438S766000

Reexamination Certificate

active

07413996

ABSTRACT:
A method of forming a high k gate insulation layer in an integrated circuit on a substrate. A high k layer is deposited onto the substrate, and patterned with a mask to define the high k gate insulation layer and exposed portions of the high k layer. The exposed portions of the high k layer are subjected to an ion implanted species that causes lattice damage to the exposed portions of the high k layer. The lattice damaged exposed portions of the high k layer are etched to leave the high k gate insulation layer.

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