High-k dielectric stack in a MIM capacitor and method for...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S303000, C257S304000, C257S311000, C438S239000, C438S240000, C438S253000

Reexamination Certificate

active

06885056

ABSTRACT:
According to one exemplary embodiment, a high-k dielectric stack situated between upper and lower electrodes of a MIM capacitor comprises a first high-k dielectric layer, where the first high-k dielectric layer has a first dielectric constant. The high-k dielectric stack further comprises an intermediate dielectric layer situated on the first high-k dielectric layer, where the intermediate dielectric layer has a second dielectric constant. According to this exemplary embodiment, the high-k dielectric stack further comprises a second high-k dielectric layer situated on the intermediate dielectric layer, where the second high-k dielectric layer has a third dielectric constant. The second dielectric constant can be lower than the first dielectric constant and the third dielectric constant. The high-k dielectric stack further comprises first and second cladding layers, where the first cladding layer is situated underneath the first high-k dielectric layer and the second cladding layer is situated on the second high-k dielectric layer.

REFERENCES:
patent: 6048766 (2000-04-01), Gardner et al.
patent: 6156600 (2000-12-01), Chao et al.
patent: 6495878 (2002-12-01), Hayashi et al.
patent: 6639267 (2003-10-01), Eldridge
patent: 6693321 (2004-02-01), Zheng et al.
Won, et al., “Novel Plasma Enhanced Atomic Layer Deposition Technology for High-k Capacitor with EOT of 8Å on Conventional Metal Electrode”; 2003 Symposium on VLSI Technology Digest of Technical Papers, 4-89114-035-6/03.
Hu et al., “High Performance ALD HfO2-Al2O3Laminate MIM Capacitors for RF and Mixed Signal IC Applications,” ISBN 0-7803-7873-3, IEEE, 2003.

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