Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-26
2005-04-26
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S303000, C257S304000, C257S311000, C438S239000, C438S240000, C438S253000
Reexamination Certificate
active
06885056
ABSTRACT:
According to one exemplary embodiment, a high-k dielectric stack situated between upper and lower electrodes of a MIM capacitor comprises a first high-k dielectric layer, where the first high-k dielectric layer has a first dielectric constant. The high-k dielectric stack further comprises an intermediate dielectric layer situated on the first high-k dielectric layer, where the intermediate dielectric layer has a second dielectric constant. According to this exemplary embodiment, the high-k dielectric stack further comprises a second high-k dielectric layer situated on the intermediate dielectric layer, where the second high-k dielectric layer has a third dielectric constant. The second dielectric constant can be lower than the first dielectric constant and the third dielectric constant. The high-k dielectric stack further comprises first and second cladding layers, where the first cladding layer is situated underneath the first high-k dielectric layer and the second cladding layer is situated on the second high-k dielectric layer.
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Won, et al., “Novel Plasma Enhanced Atomic Layer Deposition Technology for High-k Capacitor with EOT of 8Å on Conventional Metal Electrode”; 2003 Symposium on VLSI Technology Digest of Technical Papers, 4-89114-035-6/03.
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Dornisch Dieter
Howard David J
Joshi Abhijit B
Eckert George
Newport Fab LLC
Ortiz Edgardo
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