High-k dielectric film, method of forming the same and...

Details High-k dielectric film, method of forming the same and... High-k dielectric film, method of forming the same and...

2008-07-29

2008-07-29

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S288000, C257S914000, C257SE21170, C257SE21267, C257SE21319

Reexamination Certificate

active

07405482

ABSTRACT:
A high-k dielectric film, a method of forming the high-k dielectric film, and a method of forming a related semiconductor device are provided. The high-k dielectric film includes a bottom layer of metal-silicon-oxynitride having a first nitrogen content and a first silicon content and a top layer of metal-silicon-oxynitride having a second nitrogen content and a second silicon content. The second nitrogen content is higher than the first nitrogen content and the second silicon content is higher than the first silicon content.

REFERENCES:
patent: 5834353 (1998-11-01), Wu
patent: 5876788 (1999-03-01), Bronner et al.
patent: 5880508 (1999-03-01), Wu
patent: 6013553 (2000-01-01), Wallace et al.
patent: 6020243 (2000-02-01), Wallace et al.
patent: 6291866 (2001-09-01), Wallace et al.
patent: 6291867 (2001-09-01), Wallace et al.
patent: 1 271 632 (2003-01-01), None
patent: WO 01/66832 (2001-09-01), None
International Preliminary Examination Report from corresponding International Application No. PCT/EP03/50352, Mar. 7, 2003.
International Search Report from corresponding International Application No. PCT/EP03/50352, Mar. 7, 2003.
M.R. Visokay, J.J. Chambers, A.L.P. Rotondaro, A. Shanware and L. Colombo,Application of HfSiON as a Gate Dielectric Material, pp. 3183-3185, Applied Physics Letters, vol. 80, No. 17, Apr. 29, 2002.
Takeshi Yamaguchi, Ryosuki Iijima, Tsunehiro Ino, Akira Nishiyama, Hideki Satake and Noburu Fukushima,Additional Scattering Effects for Mobility Degradation in HF-Silicate Gat MISFETs, (4pgs.) IEEE 2002.
H. Iwai, S. Ohmi, S. Kkama, C. Ohshima, A. Kikuchi, I. Kashiwagi, J. Taguchi, H. Yamamoto, J. Tonotani, Y. Kim, I. Ueda, A. Kuriyama and Y. Yoshihara, (4pgs.), IEEE 2002.
Masato Koyama, Akio Kaneko, Tsunehiro Ino, Masahiro Koike, Yoshiki Kamata, Ryosuke Iijima, Yuichi Kamimuta, Akira Takashima, Masamichi Suzuki, Chie Hongo, Seiji Inumiya, Mariko Takayanagi and Akira Nishiyama,Effects of Nitogen in HfSiON Gate Dielectric on the Electrical and Thermal Characteristics, pp. 849-852, International Electron Devices Meeting, Dec. 8-11, 2002, 2002IEEE 2002.
Jong-Ho Lee, Yun-Seok Kim, Hyung-Seok Jung, Jung-Hyoung Lee, Nae-In Lee, Ho-Kyu Kang, Youn-Keum Kim, Kyung-Hwan Cho, and Kwang-Pyuk Suh,Poly-Si Gate CMOSFETs with HfO2-Al2O3Laminate Gate Dielectric for Low Power Applications, 2pgs., 2002 Symposium on VLSI Technology Digest of Technical Papers, IEEE 2002.
S. Ohmi, S. Akama, A. Kikuchi, I. Kashiwagi, C. Ohshima, J. Taguchi, H. Yamamoto, C. Kobayashi, K. Sato, M. Takeda, K. Oshima, H. Ishiwara and H. Iwai,Rare Earth Metal Oxide Gate Thin Films Prepared by E-beam Deposition, pp. 1-5, IWGI 2001.
M.A. Quevedo-Lopez, M. El-Bounanani, M.J. Kim, B.E. Gnade and R.M. Wallace,Effect of N Incorporation on Boron Penetration From P+ Polycrytaline-Si through HfSixOy Films, pp. 4669-4671, Applied Physics Letters, vol. 82, No. 26, Jun. 30, 2003.
A.L.P. Rotondaro, M.R. Visokay, J.J. Chambers, A. Shanware, R. Khamankar, H. Bu, R.T., Laaksonen, L. Tsung, M. Douglas, R. Kuan, M.J. Bevan, T. Grider, J. McPherson and L. Colombo,Advanced CMOS Transistors with a Novel HfSiON Gate Dielectric, pp. 148-149, 2002 Symposium on VLSI Technology Digest of Technical Papers, IEEE 2002.
A. Shanware, J. McPherson, M.R. Visokay, J.J. Chambers, A.L.P. Rotondaro, H. Bu, M.J. Bevan, R. Khamankar, L. Colombo,Reliability Evaluation of HfSiON Gate Dielectric Film with 12 SiO2Equivalent Thickness, pp. 6.6.1-6.6.4, International Electron Devices Meeting, Dec. 2-5, 2001, IDEM. Technical Digest.

Affiliated with

Also associated with

Rating

High-k dielectric film, method of forming the same and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-k dielectric film, method of forming the same and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-k dielectric film, method of forming the same and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2791475