Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2006-06-27
2006-06-27
Quach, T. N. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257S100000, C257SE33066
Reexamination Certificate
active
07067848
ABSTRACT:
A High Intensity LED is disclosed to include a metal base, which has a through hole extending between the top and bottom surfaces thereof and a first electrode formed integral with and downwardly extending from the bottom surface, a second electrode inserted through the through hole and isolated from the metal base with an electrically insulative sleeve, an LED chip mounted on the top surface of the metal base and electrically contacting with the top surface of the metal base and the LED chip electrically connected to the top end of the second electrode with at least one gold wire, and an electrically insulative packaging shell surrounding the metal base and the LED chip excluding the first electrode and the bottom end of the second electrode. Red, green and/or blue color LED chips may be in contact with the top surface of the metal base to produce High Intensity light.
REFERENCES:
patent: 6031253 (2000-02-01), Kobayashi
patent: 6531328 (2003-03-01), Chen
patent: 6921927 (2005-07-01), Ng et al.
patent: 2006/0022208 (2006-02-01), Kim et al.
Lee Wen-Jen
Lin Jyun-Ze
Bacon & Thomas
Quach T. N.
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