Semiconductor device

Details Semiconductor device Semiconductor device

2006-06-06

2006-06-06

Lam, David (Department: 2827)

Static information storage and retrieval

Associative memories

Ferroelectric cell

C365S222000, C365S189070, C711S108000

Reexamination Certificate

active

07057912

ABSTRACT:
A T-CAM array is provided made up of ternary dynamic CAM cells each including a plurality of transistors. A refresh operation can be performed while reading out stored data to a match line using the same current path as that for a search operation, thereby providing a highly integrated array without reducing the original search speed. A rewrite data line is provided in parallel with a match line, and rewrite transistors are inserted between the rewrite data line and the storage nodes within each dynamic CAM cell. With this cell configuration, the data stored at each storage node is read out to the match line one at a time and rewritten through the rewrite data line to carry out a refresh operation.

REFERENCES:
patent: 6563754 (2003-05-01), Lien et al.
patent: 6576943 (2003-06-01), Ishii et al.
patent: 10-27481 (1996-07-01), None
patent: 2000-269457 (1999-03-01), None
patent: 2002-197872 (2001-12-01), None
Valerie Lines et al., “66 MHz 2.3M Ternary Dynamic Content Addressable Memory”, Records of the 2000 IEEE Workshop on Memory Technology, Design and Testing, pp. 101-105.

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