High integration semiconductor device

Details High integration semiconductor device High integration semiconductor device

1992-10-02

1993-09-28

Carroll, J.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257296, 257306, 257754, 257773, H01L 2968, H01L 2978, H01L 2992, H01L 2348

Patent

active

052488918

ABSTRACT:
A high integration semiconductor device comprises a semiconductor substrate and element separating regions formed on the semiconductor substrate to divide the semiconductor substrate into a plurality of regions to be formed as semiconductor active regions. The semiconductor active regions have contact portions for conducting the semiconductor active regions to other portions. The element separating regions are so constituted that the width of a short side of each of the semiconductor active regions at each contact portion is narrower than the width of a short side of the other portion of the semiconductor active region.

REFERENCES:
patent: 4291322 (1981-09-01), Clemens et al.
patent: 4392220 (1983-07-01), Chan
patent: 4672410 (1987-06-01), Miura et al.
patent: 4849801 (1989-07-01), Honjyo et al.
patent: 4920390 (1990-04-01), Fuse et al.
patent: 5116775 (1992-05-01), Katto et al.
H. Frantz et al., "MOSFET substrate bias-voltage generator", IBM Technical Disclosure Bulletin, vol. 11 (Mar. 1969) p. 1219.

Affiliated with

Also associated with

Rating

High integration semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High integration semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High integration semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2192741