High integrated Bi-CMOS logic circuit

Details High integrated Bi-CMOS logic circuit High integrated Bi-CMOS logic circuit

1989-01-30

1990-10-23

Miller, Stanley D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307445, 307570, H03K 1902, H03K 1920

Patent

active

049654705

ABSTRACT:
A highly integrated Bi-CMOS logic circuit using MOS transistors and Bipolar transistors, the circuit including a number of input terminals for inputting signals, an equal number of MOS transistors having drain-source current paths connected in series and each having a gate controlled by a corresponding one of the input signals, and an equal number of MOS transistors having drain-source current paths connected in parallel and each having a gate controlled by a corresponding one of the input signals. Two bipolar transistors are base-controlled by the MOS transistors.

REFERENCES:
patent: 4616146 (1986-10-01), Lee et al.
patent: 4682054 (1987-07-01), McLaughlin
patent: 4694203 (1987-09-01), Uragami et al.
patent: 4804869 (1989-02-01), Masuda et al.

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