High growth rate plasma diamond deposition process and method of

Coating processes – Measuring – testing – or indicating – Thickness or uniformity of thickness determined

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427575, 427577, 427122, 427249, 423446, B05D 306, C23C 1650

Patent

active

055187595

ABSTRACT:
A process for depositing diamond on a substrate using a microwave plasma generator including introducing a feed which includes diamond forming constituents in a desired ratio to the microwave plasma generator, and providing sufficient microwave power to the microwave plasma generator to produce a greenish-colored plasma which emits a spectrum monitored to maintain a relative emission intensity ratio of two of the constituents in a predetermined range, for depositing high quality diamond at an extremely high rate on the substrate placed proximate or in the plasma.

REFERENCES:
patent: 4957591 (1990-09-01), Sato et al.
patent: 5110577 (1992-05-01), Tamor et al.
patent: 5314540 (1994-05-01), Nakamura et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High growth rate plasma diamond deposition process and method of does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High growth rate plasma diamond deposition process and method of, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High growth rate plasma diamond deposition process and method of will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2036154

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.