High growth rate homoepitaxial diamond film deposition at high t

Details High growth rate homoepitaxial diamond film deposition at high t High growth rate homoepitaxial diamond film deposition at high t

1995-03-16

1997-05-13

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117104, 117929, 423446, C30B 2904

Patent

active

056288247

ABSTRACT:
The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

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Bachmann and Lydtin, "High Rate Versus Low Rate Diamond CVD Methods," Diamond and Diamond-Like Films and Coatings, R.E. Clausing et al. (ed.), Plenum Press, New York, pp. 829-853, 1991.
McCauley and Vohra, "Homoepitaxial Diamond Film Deposition on a Brilliant Cut Diamond Anvil," Appl. Phys. Lett., 66(12):6-8, Mar. 1995.
Snail and Hanssen, "High Temperature, High Rate Homoepitaxial Growth of Diamond in an Atmospheric Pressure Flame," Journal of Crystal Growth, 112:651-659, 1991.

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