High-frequency wiring structure and method for producing the...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257S728000, C257SE21508, C257SE31117, C257SE23053, C257SE23010, C257SE21518

Reexamination Certificate

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11050112

ABSTRACT:
A high-frequency wiring structure includes a microstrip line having a ground conductor, a dielectric disposed on the ground conductor, and a transmission conductor that is at least partially disposed in the dielectric. The transmission conductor is defined by a flat bottom parallel to the ground conductor, a pair of flat sides that are perpendicular to the ground conductor and are positioned on both sides of the flat bottom in the wiring width direction, and curved parts that continuously join the flat bottom and the pair of flat sides. The curved parts have a radius of curvature within the range of 5% to 50% of the thickness of the transmission conductor.

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patent: 6960924 (2005-11-01), Akram
patent: 9-172107 (1997-06-01), None
patent: 10-242599 (1998-09-01), None

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