Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents
Patent
1991-01-22
1992-11-03
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With provision for cooling the housing or its contents
257728, 257924, H01L 2302, H01L 2312, H01L 2940, H01L 2348
Patent
active
051610000
ABSTRACT:
A high-frequency semiconductor device includes a semiconductor element disposed on a top surface of a protrusion of a thin heat-radiating plate. The high-frequency semiconductor device also has a first conductive grounding bridge on which a MOS capacitive element is disposed. Since the heat-radiating plate can be extended to lie beneath the conductive grounding bridge, the heat resistance of the semiconductor element and of the heat-radiating plate can be reduced, and the size of the insulating substrate can be reduced.
REFERENCES:
patent: 4161740 (1979-07-01), Frey
patent: 4400711 (1983-08-01), Avery
James Andrew J.
Jr. Carl Whitehead
Mitsubishi Denki & Kabushiki Kaisha
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