High-frequency semiconductor device including microstrip transmi

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

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257668, 257728, 333247, H01L 2302, H01L 2312, H01P 100

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active

054263190

ABSTRACT:
A semiconductor device includes a silicon substrate on which a circuit having a predetermined function is formed and a high frequency circuit chip which is mounted on the silicon substrate and operates at high frequencies, and operates with functions of the silicon substrate and the high frequency circuit chip, wherein a thin film tape having a microstrip structure including an insulating film, a signal line on a surface of the insulating film and a grounding layer on a rear surface of the insulating film, is disposed on the silicon substrate, whereby the silicon substrate is electrically connected to the high frequency circuit chip. As a result, a conventional silicon substrate is employed and a production cost is reduced.

REFERENCES:
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patent: 5049978 (1991-09-01), Bates et al.
patent: 5067005 (1991-11-01), Michii et al.
patent: 5087530 (1992-02-01), Wada et al.
Brandner et al, "Electrical Characterization of Polyhic, A High Density, High Frequency, Interconnection and Packaging Medium for Digital Circuits", IEEE, pp. 759-764.
Geller et al, "Integration And Packaging Of GaAs MMIC Subsystems Using Silicon Motherboards", IEEE GaAs IC Symposium, Technical Digest, Oct. 1990, pp. 85-87.

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