Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-26
2000-10-31
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257390, H01L 2994
Patent
active
061406872
ABSTRACT:
In an active area surrounded with an isolation formed on a silicon substrate, a large number of unit cells are disposed in a matrix, and the unit cell together form one MOSFET. Each of the unit includes a ring gate electrode in the shape of a regular octagon, a drain region and a source region formed at the inside and outside of the gate electrode, respectively, two gate withdrawn wires extending from the gate electrode to area above the isolation, a substrate contact portion in which the surface of the substrate is exposed, and contacts for electrically connecting these elements with wires. These elements such as the ring gate electrode and the gate withdrawn wires are formed so as to attain a high frequency characteristic as good as possible. Thus a MOSFET for use in a high frequency signal device, the high frequency characteristic such as the minimum noise figure and the maximum oscillation frequency in particular can be totally improved.
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Hayashi Joji
Hirai Takehiro
Nakamura Takashi
Shimomura Hiroshi
Guay John
Matsushita Electric - Industrial Co., Ltd.
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