Amplifiers – With semiconductor amplifying device – Including particular biasing arrangement
Patent
1998-01-20
1999-11-09
Mottola, Steven J.
Amplifiers
With semiconductor amplifying device
Including particular biasing arrangement
330140, 330302, 330310, H03F 3191, H03F 368
Patent
active
059822368
ABSTRACT:
A high-frequency power amplifier comprises a transistor for high-frequency power which operates and whose current-voltage characteristics greatly change when positive voltage is supplied on its input terminal, an input bias circuit, an output bias circuit, an input impedance matching circuit, an output impedance matching circuit, and a positive voltage generation circuit. The positive voltage generation circuit comprises a detection circuit which detects part of the high-frequency power which is entered to or outputted from the transistor for high-frequency power, a rectification circuit which rectifies the part of the high-frequency power outputted from the detection circuit and outputs pulsating positive voltage, and a smoothing circuit which smoothes the pulsating positive voltage outputted from the rectification circuit and outputs positive voltage. The positive voltage generation circuit outputs positive voltage which increases or decreases in accordance with an increase or decrease in the detected part of the high-frequency power to the input terminal of the input bias circuit, without intervention of a direct-current power supply.
REFERENCES:
patent: 5373251 (1994-12-01), Kunimoto et al.
patent: 5757237 (1998-05-01), Staudinger et al.
K.J. Youn, et al., "Low dissipation power and high linearity PCS power amplifier with adaptive gate bias control circuit", Electronics Letters, Aug. 15, 1996, vol. 32, No. 17, pp. 1533-1535.
Ishikawa Osamu
Ito Junji
Kunihisa Taketo
Nishijima Masaaki
Yamamoto Shinji
Matsushita Electric - Industrial Co., Ltd.
Mottola Steven J.
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