Amplifiers – With semiconductor amplifying device – Including temperature compensation means
Reexamination Certificate
2007-02-27
2008-10-21
Choe, Henry K (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including temperature compensation means
C330S296000
Reexamination Certificate
active
07439808
ABSTRACT:
A high-frequency power amplifier with a temperature compensation function for power amplifying a high-frequency signal, includes: a power amplifying transistor having an emitter grounded; a high power output bias circuit that supplies a high power output current corresponding to a high power output of the high-frequency power amplifier to the power amplifying transistor; and a low power output bias circuit that supplies a low power output current corresponding to a low power output of the high-frequency power amplifier to the power amplifying transistor.
REFERENCES:
patent: 6922107 (2005-07-01), Green
patent: 6992524 (2006-01-01), Yang et al.
patent: 7154336 (2006-12-01), Maeda
patent: 7310015 (2007-12-01), Jeon et al.
patent: 7358817 (2008-04-01), Kao et al.
patent: 2003-347850 (2003-12-01), None
patent: 2004-40500 (2004-02-01), None
Enomoto Singo
Inamori Masahiko
Koizumi Haruhiko
Makihara Hirokazu
Matsuda Singo
Choe Henry K
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
LandOfFree
High-frequency power amplifier does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High-frequency power amplifier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-frequency power amplifier will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4018978