Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2006-11-28
2006-11-28
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C118S7230ER, C257SE31001
Reexamination Certificate
active
07141516
ABSTRACT:
An object is to provide a high-frequency plasma generating apparatus and process which can further advance uniformity of the thickness of a film on a substrate with a large area in comparison with conventional apparatuses. In a reaction chamber (1), a ground electrode (3) is disposed, and a discharge electrode (2) is disposed opposite to the ground electrode (3). A substrate (4) as a processing object is placed in close contact with the ground electrode (3). A high-frequency voltage is applied to the discharge electrode (2) so as to generate plasma between the ground electrode and the discharge electrode. An RF electric power supply (15) generates a first high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on a lateral portion of the discharge electrode (2). An RF electric power supply (16) generates a second high-frequency voltage, and outputs the generated voltage on feeding points (9) disposed on another lateral portion of the discharge electrode (2). Here, the second high-frequency voltage has the same frequency as that of the first high-frequency voltage and has a phase which varies with a low-frequency signal, which is modulated by a predetermined modulation signal.
REFERENCES:
patent: 5571366 (1996-11-01), Ishii et al.
patent: 6353201 (2002-03-01), Yamakoshi et al.
patent: 6380684 (2002-04-01), Li et al.
patent: 6456010 (2002-09-01), Yamakoshi et al.
patent: 6720268 (2004-04-01), Laermer et al.
patent: 6835279 (2004-12-01), Li et al.
patent: 2001/0021422 (2001-09-01), Yamakoshi et al.
patent: 2005/0255255 (2005-11-01), Kawamura et al.
patent: 5-291155 (1993-11-01), None
patent: 2001-257098 (2001-09-01), None
patent: 2001-274099 (2001-10-01), None
patent: 2002-327276 (2002-11-01), None
patent: 2003-264152 (2003-09-01), None
Kawamura Keisuke
Mashima Hiroshi
Takeuchi Yoshiaki
Yamada Akira
Coleman W. David
Mitsubishi Heavy Industries Ltd.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
LandOfFree
High frequency plasma generator and high frequency plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with High frequency plasma generator and high frequency plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High frequency plasma generator and high frequency plasma... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3674506