High frequency plasma generation apparatus

Electricity: electrical systems and devices – Electric charge generating or conducting means

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20419234, 31511171, H05H 116

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active

047164913

ABSTRACT:
In a high frequency plasma generation apparatus used in a reactive ion etching apparatus, an ion shower apparatus, a sputter apparatus, etc. for fabricating thin films or semiconductor devices for which a fine patterning process is required, electrical breakdown is apt to be provoked at the surface of a high frequency coil, because the high frequency coil is usually inserted in a plasma. In order to remove this drawback, according to this invention, the high frequency coil is disposed in the plasma production chamber at the neighborhood of the cylindrical side wall, and thus a plasma confinement domain is formed inside of this high frequency coil by use of a magnetic field production device which generates a multi-cusp magnetic field so that the plasma confinement domain is separated from the high frequency coil. In this way, electrical breakdown on the surface of the high frequency coil is prevented and thus the apparatus according to this invention can work stably for a long time.

REFERENCES:
patent: 3230418 (1966-01-01), Dandl et al.
patent: 3467885 (1969-09-01), Cann
patent: 3527977 (1970-09-01), Ruark
patent: 4152625 (1974-05-01), Conrad
patent: 4233109 (1980-11-01), Nishizawa
patent: 4351712 (1982-09-01), Cuomo et al.
patent: 4559100 (1985-12-01), Ninomiya et al.
Microwave Ion Source by Sakudo et al. publ. Rev. Sci. Instrum., vol. 48, No. 7, Jul. 1977.
A New Production Technique: Ion Milling by Bollinger et al. publ. by Solid State Technology Nov. 1980.
Summary Abstract: Radio Frequency Ion Source Development for Neutral Beam Applications by Leung et al.
Journal of Vacuum Science Tech. Apr.-Jun. 1984.

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