High frequency MOS device

Details High frequency MOS device High frequency MOS device

1994-12-01

1996-01-23

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257342, 257401, 257750, 257754, 257755, 257758, 257412, 257413, 437 48, 437193, 437194, 437233, H01L 2978, H01L 21265

Patent

active

054867150

ABSTRACT:
A high frequency power MOS device (90) that is built by MOS technology having high speed switching capability. The device provides improved turn-on and turn-off capabilities by providing gate interconnects comprising substantially metallization, thereby reducing parasitic resistance and capacitance. The device may be fabricated by a MOS process relying upon a dual metallization layer (127, 133) for forming the interconnects. The dual metallization layer has substantially less resistivity than the conventional polysilicon and metallization layer interconnect.

REFERENCES:
patent: 5119153 (1992-06-01), Korman et al.
patent: 5164802 (1992-11-01), Jones et al.

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