Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2005-09-27
2005-09-27
Gurley, Lynne (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S411000, C438S421000, C438S422000, C438S424000, C438S427000, C438S619000, C438S620000
Reexamination Certificate
active
06949444
ABSTRACT:
A method for forming at least one conductive line intended to receive high-frequency or high-value currents, formed above a given portion of a solid substrate outside of which are formed other elements, including the steps of digging at least one trench in the solid substrate; forming an insulating area in the trench; and forming said conductive line above the insulating area.
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Arnal Vincent
Farcy Alexis
Torres Joaquim
Gurley Lynne
Jorgenson Lisa K.
Morris James H.
STMicroelectronics S.A.
Wolf Greenfield & Sacks P.C.
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