High-frequency introducing means, plasma treatment apparatus, an

Details High-frequency introducing means, plasma treatment apparatus, an High-frequency introducing means, plasma treatment apparatus, an

1997-12-10

2000-11-28

Ahmad, Nasser

Coating apparatus

Gas or vapor deposition

With treating means

118723AN, 118723E, 118723MP, 118723MW, 156345C, 156345P, 156345PW, 20429838, C23C 1600

Patent

active

061520713

ABSTRACT:
A high frequency introducing means is provided which comprises a high frequency electrode having a shape of a bar or plate for generating plasma by high frequency power, and an adjustment mechanism for adjusting an absolute value of reactance between an end of the electrode opposite to a high frequency power introducing point of the electrode and a grounded portion. A plasma treatment apparatus and a plasma treatment method are also provided employing the above high frequency introducing means. A deposition film of high quality is formed stably and efficiently in an extremely uniform thickness and an extremely uniform quality at a high speed on a base member of a large area by adjusting the absolute value of the reactance.

REFERENCES:
patent: 5540781 (1996-07-01), Yamagami et al.
patent: 5902405 (1999-05-01), Ueda
H. Curtins, et al., "Influence of Plasma Excitation Frequency for a-Si:H Thin Film Deposition", Plasma Chemistry and Plasma Processing, vol. 7, p. 267-73 (1987).

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