Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Bump leads
Reexamination Certificate
2006-04-10
2009-06-30
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Bump leads
C257S673000, C257S773000, C257S776000, C257S783000, C257S787000, C257S789000, C257S795000, C257SE23021, C257SE23069, C257SE23121
Reexamination Certificate
active
07554197
ABSTRACT:
A high frequency IC package mainly includes a substrate, a bumped chip, and a plurality of conductive fillers where the substrate has a plurality of bump holes penetrating from the top surface to the bottom surface. The active surface of the chip is attached to the top surface of the substrate in a manner that the bumps are inserted into the bump holes respectively. The conductive fillers are formed in the bump holes to electrically connect the bumps to the circuit layer of the substrate. The high frequency IC package has a shorter electrical path and a thinner package thickness.
REFERENCES:
patent: 6975035 (2005-12-01), Lee
Chiu Shih Feng
Huang Hsiang-Ming
Lee Yi-Chang
Lin Chun-Hung
Lin Yeong-Jyh
ChipMOS Technologies (Bermuda) Ltd
ChipMOS Technologies Inc.
Clark Jasmine J
Troxell Law Office PLLC
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