High frequency/high output insulated gate semiconductor device w

Details High frequency/high output insulated gate semiconductor device w High frequency/high output insulated gate semiconductor device w

1995-12-27

1998-02-17

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257382, H01L 2976, H01L 2994

Patent

active

057194297

ABSTRACT:
An insulated gate semiconductor device, which improves high frequency characteristics by reducing the resistance of a path from a gate bonding portion to each gate and eliminating an unbalance in resistances of respective gates, and which obtain a higher output by eliminating a limitation in current capacity due to the thickness of a first metal layer. In this insulated gate semiconductor device, a first aluminum layer is connected in parallel onto a gate electrode made of polycrystalline silicon. The adjacent gates, each having such a double layer structure, extend outside channel regions and are connected to each other. A lead-out electrode of a second aluminum layer is connected to the center of the connection portion of the adjacent gates through an opening portion. A gate bonding portion is provided at the center of the lead-out electrode. Each of source and drain electrodes is also of a double layer structure having the first aluminum layer and the second aluminum layer.

Affiliated with

Also associated with

Rating

High frequency/high output insulated gate semiconductor device w does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High frequency/high output insulated gate semiconductor device w, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High frequency/high output insulated gate semiconductor device w will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1786300