High-frequency device

Details High-frequency device High-frequency device

2005-08-30

2005-08-30

Pascal, Robert (Department: 2817)

Wave transmission lines and networks

Coupling networks

Wave filters including long line elements

C333S0990MP, C505S210000

Reexamination Certificate

active

06937117

ABSTRACT:
A high-frequency device comprises a dielectric substrate, a filter element which has a plurality of resonating elements made of a first superconductor film on the dielectric substrate, a dielectric plate which faces the dielectric substrate substantially in parallel with the substrate and covers the plurality of resonating elements, and a spacing adjusting member configured to control the spacing between the dielectric plate and the dielectric substrate. The high-frequency device enables the pass-band frequency of the filter to be adjusted with high accuracy without variations in the skirt characteristic or ripple characteristic.

REFERENCES:
patent: 3558213 (1971-01-01), Marcatili
patent: 4638271 (1987-01-01), Jecko et al.
patent: 5391543 (1995-02-01), Higaki et al.
patent: 5616538 (1997-04-01), Hey-Shipton et al.
patent: 5965494 (1999-10-01), Terashima et al.
patent: 6016434 (2000-01-01), Mizuno et al.
patent: 6049726 (2000-04-01), Gruenwald et al.
patent: 6347237 (2002-02-01), Eden et al.
patent: 6360112 (2002-03-01), Mizuno et al.
patent: 6463308 (2002-10-01), Wikborg et al.
patent: 6532377 (2003-03-01), Terashima et al.
patent: 6546266 (2003-04-01), Okazaki et al.
patent: 1 026 772 (2000-08-01), None
patent: 63-081402 (1988-05-01), None
patent: 2-35461 (1990-03-01), None
patent: 2-159102 (1990-06-01), None
patent: 4-77272 (1992-07-01), None
patent: 4-355804 (1992-12-01), None
patent: 4-368006 (1992-12-01), None
patent: 5-199024 (1993-08-01), None
patent: 9-307307 (1997-11-01), None
patent: 10-51204 (1998-02-01), None
patent: 2000-196308 (2000-07-01), None
patent: 2001-077604 (2001-03-01), None
patent: 2001-211004 (2001-08-01), None
patent: 2001-308605 (2001-11-01), None
patent: 2002-141705 (2002-05-01), None
patent: WO 95/35584 (1995-12-01), None
R. R. Bonetti, et al., IEEE MTT-S International Microwave Symposium Digest, vol. 1, pp. 273-276, XP-000143895, “Preliminary Desigh Steps for Thin-Film Superconducting Filters”, May 8-10, 1990.
A. T. Findikoglu, et al., “Electrically Tunable Coplanar Transmission Line Resonators Using Vba2Cu3O7-x/SrTiO3Bilayers,” Appl. Phys. Lett., vol. 66 (26), Jun. 26, 1995, pp. 3674-3676.
A. T. Findikoglu, et al., “Tunable and Adaptive Bandpass Filter Using a Nonlinear Dielectric Thin Film of SrTiO3, ” Appl. Phys. Lett., vol. 68 (12), Mar. 18, 1995, pp. 1651-1653.
D. E. Oates, et al., “Tunable Superconducting Reasonators Using Ferrite Substrates,” IEEE MTT-S Digest, 1997, pp. 303-306.
Jia-Sheng Hong et al., “On the Delevlopment of Superconducting Microstrip Filters for Mobile Communication Applications, ” IEEE Transactions on Microwave Theory and techniques, vol. 47, No. 9, Sep. 1999, pp. 1656-1663.
T. Sakatani, et al., “Mechanical Tuning of Resonant Frequency of a Superconducting Microwave Filter,” Proceeding of Spring Meeting of Jpn. Society of Cryogenic Engineering, 2000, p. 146.
Y. Nagai et al., “1.5-GH2Band-Pass Microstrip Filters Fabricated Using EuBaCuO Superconducting Films”, Jpn. J. Appl. Phys. vol. 32, Feb. 15, 1993, pp. L260-L263.
D. Zhang, et al., “Compact Forward-Coupled Superconducting Microstrip Filters for Cellular Communication”, IEEE, Transactions of Applied Superconductivity, vol. 5, No. 2, Jun. 1995, pp. 2658-2659.
Jia-Sheng Hong, et al., “On the Performance of HTS Microstrip Quasi-Elliptic Function Filters for Mobile Communications Application”, IEEE Transaction on Microwave Theory and Techniques, Vo. 48, No. 7, Jul. 2000, pp. 1240-1246.
K. Setsune, et al., “Elliptic-Disc Filters of High-TcSuperconducting Films for Power Handling Capability Over 100 W”, IEEE Transactions on Microwave Theory and techniques, vol. 48, No. 7, Jul. 2000, pp. 1256-1264.

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