Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-04
2005-01-04
Nadav, Ori (Department: 2811)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S669000, C438S670000, C257S728000, C216S013000
Reexamination Certificate
active
06838377
ABSTRACT:
In the production of a high frequency circuit chip in which a wiring pattern is disposed on a substrate having a through-hole, a connecting electrode of the through-hole is formed by filling electrically conductive paste into a perforation and firing it, and the wiring pattern is formed by a lift-off method. Moreover, at least the surface of the substrate for the wiring pattern to be formed thereon is mirror-polished, and thereafter, the wiring pattern is formed on the mirror-polished surface by the lift-off method.
REFERENCES:
patent: 4665468 (1987-05-01), Dohya
patent: 5190892 (1993-03-01), Sano
patent: 5480048 (1996-01-01), Kitamura et al.
patent: 61091998 (1986-05-01), None
Hatada Mitsunori
Tonami Yoshiyuki
Keating & Bennett LLP
Murata Manufacturing Co. Ltd.
Nadav Ori
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