High frequency analog transistors method of fabrication and circ

Details High frequency analog transistors method of fabrication and circ High frequency analog transistors method of fabrication and circ

1995-06-05

1998-09-15

Dutton, Brian

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

On insulating substrate or layer

438322, 438355, H01L 21331, H01L 218222, H01L 218228

Patent

active

058077804

ABSTRACT:
A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.

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