High frequency analog transistors, method of fabrication and cir

Details High frequency analog transistors, method of fabrication and cir High frequency analog transistors, method of fabrication and cir

1993-10-04

1997-09-16

Saadat, Mahshid D.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

257607, 257511, 257517, H01L 2900

Patent

active

056683979

ABSTRACT:
A fabrication process for dielectrically isolated high frequency complementary analog bipolar and CMOS transistors. Polysilicon extrinsic bases, polysilicon emitters with sidewall spacers formed after intrinsic base formation provides high current gain, large emitter-to-base breakdown voltage, large Early voltage, and high cutoff frequency.

REFERENCES:
patent: 3812519 (1974-05-01), Nakamuno et al.
patent: 4665425 (1987-05-01), Plotrowski
patent: 4740478 (1988-04-01), Zdebel et al.
patent: 4897362 (1990-01-01), Delgado et al.
patent: 4900689 (1990-02-01), Bajor et al.
patent: 5175607 (1992-12-01), Ikeda
IBM TDB, vol. 22, No. 9, Feb. 1990, pp. 4047-4051.

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