High energy ultraviolet laser reflector grown on a single crysta

Optical: systems and elements – Having significant infrared or ultraviolet property – Multilayer filter or multilayer reflector

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

427255, 359884, 359838, G02B 508, C23C 1600

Patent

active

050428870

ABSTRACT:
Optical reflectors and methods of constructing optical reflectors having high damage thresholds, durability and general applicability are disclosed in which a highly planar substrate, such as a single crystal silicon or other single crystalline material, is disposed within a deposition chamber and oriented to present a particular crystallographic plane. An epitaxial layer of reflective metal, such as aluminum, is grown upon the substrate by ion beam or other method of deposition and then covered with a transparent protective coating.

REFERENCES:
patent: 4482209 (1984-11-01), Grewal et al.
patent: 4799454 (1989-01-01), Ito
patent: 4805555 (1989-02-01), Itoh
Hutcheson, E. T., Hass, G. and Cox, J. T., Effect of Deposition Rate and Substrate Temperature on the Vacuum Ultraviolet Reflectance of MgF.sub.2 -- and LiF--Overcoated Aluminum Mirrors, Applied Optics, vol. 11, No. 10, Oct. 1972, pp. 2245-2248.
Yamada et al., Epitaxial Growth of Al on Si(111) and Si(100) by Ionized-Cluster Beam, J. Appl. Phys. 56 (10), Nov. 15, 1984, pp. 2746-2750.
Yamada et al., Ionized Cluster Beam Epitaxy of Single Crystalline Aluminum Films on Semiconductors and Insulators as an Approach to New Device Structures, Extended Abstract of the 17th Conf. on Solid State Devices and Materials, Tokyo, 1985, pp. 313-316.
Takagi, History and Current Status of the Ionized Cluster Beam Technique, Proc. Int'l Workshop on ICBT Tokyo-Kyoto (1986).
Yamada et al., Current Status of Ionized-Cluster Beam Technique: A Low Energy Ion Beam Deposition, Nuclear Instruments and Methods in Physics Research (1987), pp. 120-123.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

High energy ultraviolet laser reflector grown on a single crysta does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High energy ultraviolet laser reflector grown on a single crysta, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High energy ultraviolet laser reflector grown on a single crysta will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1410748

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.