High-energy ion implanter and method of operation thereof

Details High-energy ion implanter and method of operation thereof High-energy ion implanter and method of operation thereof

2006-03-28

2006-03-28

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C250S492210, C250S281000, C250S282000

Reexamination Certificate

active

07019316

ABSTRACT:
A high-energy ion implanter monitors the recycling of a charge exchanging gas that is supplied to a stripper of a tandem accelerator. When the charge exchanging gas leaks out from the stripper and then flows into both energy boxes adjacent the tandem accelerator, gas sensors in the energy boxes measure the amount of the charge exchanging gas and send corresponding data to a controller. The controller compares the measured data with a standard data on the charge exchanging gas. When the measured data is different from the standard data, a pre-established interlocking system breaks off the operation of the implanter.

REFERENCES:
patent: 6462331 (2002-10-01), Choi et al.
patent: 6815666 (2004-11-01), Schroeder et al.
patent: 2004/0251432 (2004-12-01), Sano et al.
patent: 2000-124148 (2000-04-01), None
patent: 2002-0032762 (2002-05-01), None
patent: 2002-0083601 (2002-11-01), None

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