High energy ESD structure and method

Details High energy ESD structure and method High energy ESD structure and method

2006-08-29

2006-08-29

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S173000, C257S174000, C257S356000, C257S357000, C257S358000, C257S359000, C257S360000, C257S361000, C257S362000, C257S401000, C257S409000

Reexamination Certificate

active

07098509

ABSTRACT:
In one embodiment, a concentric ring ESD structure includes a first p-type region and a second p-type region are formed in a layer of semiconductor material. The two p-type regions are coupled together with a floating n-type buried layer. The first and second p-type regions form a back-to-back diode structure with the floating n-type buried layer. A pair of shorted n-type and p-type contact regions is formed in each of the first and second regions. An isolation region is formed between the first and second p-type regions.

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