High electron mobility transistor

Details High electron mobility transistor High electron mobility transistor

1992-07-24

1994-06-07

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257194, 257201, H01L 2980

Patent

active

053192230

ABSTRACT:
A high electron mobility transistor (HEMT) comprises an InGaAs channel layer formed on a semi-insulating InP substrate via a buffer layer, and an n-type InA.iota.As electron supply layer formed on the channel layer via a spacer layer. On the electron supply layer, formed is an InGaA.iota.P Schottky contact layer, on which a Schottky gate electrode is formed. Source and drain electrodes are formed on the Schottky contact layer via an InGaAs ohmic contact layer, interposing the Schottky gate electrode therebetween. Thus, there is provided an InA.iota.As/InGaAs HEMT having a high gate breakdown voltage, and exhibiting a small variance of characteristics.

REFERENCES:
patent: 4833101 (1989-05-01), Fujii
patent: 4855797 (1989-08-01), Kohn et al.
patent: 4996163 (1991-02-01), Sasaki
patent: 5148245 (1992-09-01), Takikawa et al.
patent: 5170230 (1992-12-01), Takikawa
Loualiche et al., "Low-Temperature DC Characteristics of Pseudomorphic Ga.sub.0.18 In.sub.0.82 P/InP/Ga.sub.0.47 In.sub.0.53 As HEMT," Apr. 1990, IEEE Electron Device Letters, vol. 11, No. 4, pp. 153-154.
Applied Physics Letters 55, 2099 (Nov. 13, 1989), pp. 2099-2101: "Pseudomorphic GalnP Schottky Diode and High Electron Mobility Transistor On InP"; S. Loualiche, et al.
Denshi Tsushin Gakkai Gijutsu Kenkyu Hokoku SSD81-95 (1981), pp. 45-49: "TiW Silicide Gate Technology for Self-Aligned GaAs MESFET VLSI"; N. Yokoyama, et al.

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