High efficiency power amplifier

Details High efficiency power amplifier High efficiency power amplifier

2009-01-12

2010-11-30

Choe, Henry K (Department: 2817)

Amplifiers

With control of power supply or bias voltage

With control of input electrode or gain control electrode bias

C330S12400D

Reexamination Certificate

active

07843262

ABSTRACT:
Disclosed a power amplifier including a main amplifier with class bias AB and a peak amplifier with class C bias. A quarter-wave length transmission line having a length equal to one-fourth of the wave-length of a fundamental frequency is connected to an output side of the peak amplifier. Outputs of the main amplifier and the peak amplifier are combined. An envelope amplifier that modulates the drain bias voltage in accordance with an envelope of the modulation wave input signal and an envelope detector are provided as a drain-bias circuit for the main amplifier (FIG.1).

REFERENCES:
patent: 5757229 (1998-05-01), Mitzlaff
patent: 7345535 (2008-03-01), Kwon et al.
patent: 7352239 (2008-04-01), Lee et al.
patent: 2009/0058532 (2009-03-01), Kikkawa et al.
patent: 2007-81800 (2007-03-01), None
Donald F. Kimball et al., “High-Efficiency Envelope-Tracking W-CDMA Base Station Amplifier Using GaN HFETs”, IEEE Transactions on Microwave Theory and Techniques, vol. 54, No. 11, Nov. 2006, pp. 3848-3856.
I. Takenaka et al., “A 240W Doherty GaAs Power FET Amplifier With High Efficiency and Low Distortion for W-CDMA Base Stations”, 2004 IEEE MTT-S Int. Microwave Symp. Dig., pp. 525-528.

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