High-efficiency miniature magnetic integrated circuit structures

Details High-efficiency miniature magnetic integrated circuit structures High-efficiency miniature magnetic integrated circuit structures

1997-04-04

1999-07-20

Le, Vu A.

Static information storage and retrieval

Systems using particular element

Hall effect

365 9, 365 14, 365173, G11C 1118

Patent

active

059264144

ABSTRACT:
Magnetic integrated circuit structures exhibit desirable characteristics for purposes of realizing a magnetic semiconductor memory. In combination with a carrier-deflection-type magnetic field sensor, each of a variety of magnet structures realize a condition in which the magnetic field is substantially orthogonal to the direction of travel of carriers of a sense current, thereby achieving maximum sensitivity. In general, the magnetic structures are highly efficient and achieve a high degree of control of the magnetic field. As a result, a minimum-size device such as a MOS device suffices for purposes of sourcing a magnetizing current. By basing a magnetic memory cell on a single minimum-size MOS device, a small cell may be realized that compares favorably with a conventional DRAM or FLASH memory cell. The greater degree of control over the magnetic field afforded by the magnetic structures enables cross-coupling between cells in a memory array to be minimized.

REFERENCES:
patent: 3048829 (1962-08-01), Bradley
patent: 3223985 (1965-12-01), Bittmann et al.
patent: 3418645 (1968-12-01), Fussell
patent: 3466634 (1969-09-01), Gamblin
patent: 3613013 (1971-10-01), Vallese
patent: 3714523 (1973-01-01), Bate
patent: 3727199 (1973-04-01), Lekven
patent: 4283643 (1981-08-01), Levin
patent: 4607271 (1986-08-01), Popovic et al.
patent: 4791604 (1988-12-01), Lienau et al.
patent: 4803658 (1989-02-01), Grimes
patent: 4831427 (1989-05-01), Coleman, Jr.
patent: 4887236 (1989-12-01), Schloemann
patent: 5075247 (1991-12-01), Matthews
patent: 5089991 (1992-02-01), Matthews
patent: 5107460 (1992-04-01), Matthews
patent: 5208477 (1993-05-01), Kub
patent: 5289410 (1994-02-01), Katti et al.
patent: 5295097 (1994-03-01), Lienau
patent: 5329480 (1994-07-01), Wu et al.
Beam et al., "Memory Device and its Fabrication", IBM Technical Disclosure Bulletin, vol. 8, No. 12, pp. 1825-1826 (1966).
Gutwin et al., "Wire Memory", IBM Technical Disclosure Bulletin, vol. 8, No. 11, p. 1621 (1965).
Middelhoek et al., "Magnetic Film Memory", IBM Technical Disclosure Bulletin, vol. 7, No. 1, pp. 81-82 (1964).

Affiliated with

Also associated with

Rating

High-efficiency miniature magnetic integrated circuit structures does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High-efficiency miniature magnetic integrated circuit structures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High-efficiency miniature magnetic integrated circuit structures will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1328169