Static information storage and retrieval – Read/write circuit – Including signal clamping
Patent
1990-03-26
1991-08-06
Bowler, Alyssa H.
Static information storage and retrieval
Read/write circuit
Including signal clamping
36518909, 36518911, 365203, 307482, 307578, G11C 11406, G11C 1140
Patent
active
050383256
ABSTRACT:
An integrated circuit includes a charge pump to provide current at a potential which is greater than a supply potential. An oscillator provides an output to a pair of capacitors. Each capacitor is bypassed respectively by one of a pair of clamp circuits. An output transistor is gated by one of the clamp circuits to maintain a continuous output at an elevated potential, while reducing power loss caused by impedances within the charge pump circuit. By using the charge pump as a source of elevated potential, the circuit layout of the DRAM array is simplified and the potential boosting circuitry can be locataed outside of the array, on the periphery of the integrated circuit. When used with an integrated circuit device, such as a DRAM, the current from the charge pump may be supplied to nodes on isolation devices and nodes on word lines, thereby improving the performance of the DRAM without substantially changing the circuit configuration of the DRAM array.
REFERENCES:
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patent: 4616143 (1986-10-01), Miyamoto
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patent: 4769784 (1988-09-01), Doluca et al.
patent: 4804870 (1989-02-01), Mahmud
patent: 4896297 (1990-01-01), Miyatake
patent: 4901280 (1990-02-01), Patel
patent: 4954731 (1990-09-01), Dhong et al.
Chern Wen-Foo
Douglas Kurt P.
Bowler Alyssa H.
Micro)n Technology, Inc.
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