High durability mask for dry etch processing of GaAs

Details High durability mask for dry etch processing of GaAs High durability mask for dry etch processing of GaAs

1993-01-07

1995-01-03

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156662, 156643, 156646, H01L 2100

Patent

active

053783166

ABSTRACT:
A mask is described which enables the fabrication of features in GaAs such as waveguides, channels, facets, mesas, and mirrors by dry etch processing in chlorine containing ambients. The mask consists of an amorphous form of carbon which may contain incorporated hydrogen. The mask can be applied, patterned and removed through dry processing techniques.

REFERENCES:
patent: 4436797 (1984-03-01), Brady et al.
patent: 4640737 (1987-02-01), Nagasaka et al.
patent: 4837182 (1989-06-01), Bozler et al.
patent: 4860276 (1989-08-01), Ukita et al.
"Amorphous Carbon Films As Resist Mask With High Reactive Ion Etching Resistance For Nanometer Lithography"; Appl. Phys. Lett.: 48(13); 31 Mar. 1986; pp. 835-837; Kakuchi et al.
G. Oehrlein in Section 8.4 of "Reactive Ion Etching," Handbook of Plasma Processing Technology, Noyen Publication (1990).
Phillip C. Johnson, "The Cathodic Arc Plasma Deposition of Thin Films," Physics of Thin film, vol. 14, pp. 161 (Section 4, first paragraph), and 162 (first full paragraph), Academic Press 1989.
Coburn, "Pattent Transfer," Solid State Technology, Apr. 1986, pp. 117-122.

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