High dielectric TiO.sub.2 -SiN composite films for memory applic

Details High dielectric TiO.sub.2 -SiN composite films for memory applic High dielectric TiO.sub.2 -SiN composite films for memory applic

1998-10-21

2000-01-11

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361322, 3613215, 427 79, 427 81, H01G 406, B95D 512

Patent

active

06014310&

ABSTRACT:
A composite dielectric material useful in advanced memory applications such as dynamic random access memory (DRAM) cells is provided. The composite dielectric material of the present invention includes a mixed oxide such as TiO.sub.2 or Ta.sub.2 O.sub.5 that is interdiffused into a Si.sub.3 N.sub.4 film. Capacitors including the composite dielectric material of the present invention are also disclosed.

REFERENCES:
patent: 4432035 (1984-02-01), Hsieh et al.
patent: 4464701 (1984-08-01), Roberts et al.
patent: 4471405 (1984-09-01), Howard et al.
patent: 4882649 (1989-11-01), Chen et al.
patent: 4891684 (1990-01-01), Nishioka et al.
patent: 4959745 (1990-09-01), Suguro
patent: 5057447 (1991-10-01), Paterson
patent: 5362632 (1994-11-01), Mathews
IBM Technical Disclosure Bulletin, vol. 26 No. 10B Mar. 1984.
IBM Technical Disclosure Bulletin, vol. 32 No. 4B Sep. 1989.
Barbour, J.C. "Thin-film reaction between Ti and Si3N4", Appl. Phys. Lett., Apr. 1987, pp. 953-955.
Roberts, S., et al. "Selective Studies of Crystalline Ta2O5 Films", Journal of the Electrochemical Society, Jul. 1986, pp. 1405-1410.
Roberts, Stanley, et al. "Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators"; 1986, pp. 137-149.

Affiliated with

Also associated with

Rating

High dielectric TiO.sub.2 -SiN composite films for memory applic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High dielectric TiO.sub.2 -SiN composite films for memory applic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High dielectric TiO.sub.2 -SiN composite films for memory applic will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1467133