High dielectric TiO.sub.2 -SiN composite films for memory applic

Details High dielectric TiO.sub.2 -SiN composite films for memory applic High dielectric TiO.sub.2 -SiN composite films for memory applic

1997-01-16

1999-03-02

King, Roy V.

Coating processes

Electrical product produced

Condenser or capacitor

427 79, 4272481, 4272557, 4273977, 438240, 216 6, B05D 512

Patent

active

058767886

ABSTRACT:
A method of fabricating a dielectric material useful in advanced memory applications which comprises a metal oxide such as TiO.sub.2 or Ta.sub.2 O.sub.5 interdiffused into a Si.sub.3 N.sub.4 film is provided.

REFERENCES:
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patent: 4464701 (1984-08-01), Roberts et al.
patent: 4882649 (1989-11-01), Chen et al.
patent: 5057447 (1991-10-01), Paterson
patent: 5362632 (1994-11-01), Mathews
IBM Technical Disclosure Bulletin, vol. 26 No. 10B Mar. 1984.
IBM Technical Disclosure Bulletin, vol. 32 No. 4B Sep. 1989.
Barbour, J.C. "Thin-film reaction between Ti and Si.sub.3 N.sub.4 ", Appl. Phys. Lett., Apr. 1987, pp. 953-955.
Roberts, S., et al., "Selective Studies of Crystalline Ta.sub.2 O.sub.5 Films", Journal of the Electrochemical Society, Jul. 1986, pp. 1405-1410.
Roberts, Stanley, et al. "Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators".

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