High dielectric constant thin film structure method for forming

Details High dielectric constant thin film structure method for forming High dielectric constant thin film structure method for forming

1996-10-01

1998-11-10

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

4272557, C23C 1640

Patent

active

058340602

ABSTRACT:
There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.

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patent: 5406445 (1995-04-01), Fujii et al.
patent: 5527567 (1996-06-01), Desu et al.
patent: 5618761 (1997-04-01), Eguchi et al.

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