Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1999-11-08
2000-12-26
Meeks, Timothy
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
42725536, 4272557, 4273722, 427380, C23C 1640
Patent
active
061655562
ABSTRACT:
There is provided a (Ba, Sr) TiO.sub.3 film of higher dielectric constant and less leakage current for serving as a dielectric thin film of a capacitor in a semiconductor memory. DPM (dipivaloylmethanato) compounds of Ba, Sr and Ti are dissolved in THF (tetrahydrofuran) to obtain Ba(DPM).sub.2 /THF, Sr(DPM).sub.2 /THF and TiO(DPM).sub.2 /THF solutions which are used as source material solutions. A (Ba, Sr) TiO.sub.3 film is formed by a CVD method while increasing a relative percentage of a Ti source material flow rate to a sum of Ba source material flow rate and Sr source material flow rate. The film formation is carried out in multiple steps, and annealing is applied in each step after deposition of the film.
REFERENCES:
patent: 4775203 (1988-10-01), Vakil et al.
patent: 5372850 (1994-12-01), Uchikawa et al.
patent: 5406445 (1995-04-01), Fujii et al.
patent: 5527567 (1996-06-01), Desu et al.
patent: 5596214 (1997-01-01), Endo
patent: 5618761 (1997-04-01), Eguchi et al.
patent: 5783253 (1998-07-01), Roh
Horikawa Tsuyoshi
Kawahara Takaaki
Makita Tetsuro
Shibano Teruo
Yamamuka Mikio
Meeks Timothy
Mitsubishi Denki & Kabushiki Kaisha
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