High dielectric constant MOSFET device

Details High dielectric constant MOSFET device High dielectric constant MOSFET device

2008-06-10

2008-06-10

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000, C257SE29132, C257SE29162, C438S591000, C438S287000, C438S785000

Reexamination Certificate

active

07385265

ABSTRACT:
A semiconductor device has an MIS (metal-insulating film-semiconductor) structure, and a film mainly containing Al, O, and N atoms is used on a semiconductor. Alternatively, a semiconductor device has an MIS structure, and a film mainly containing Al, O, and N atoms is provided as a gate insulating film on a channel region between a source and a drain. Characteristics required of a gate insulating film of a 0.05 μm-gate-length-generation semiconductor transistor are satisfied. In particular, no fixed charge is included in the film, and impurity diffusion is reduced.

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