High dielectric constant materials

Details High dielectric constant materials High dielectric constant materials

2011-01-04

2011-01-04

Landau, Matthew C (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S768000, C438S775000, C257SE21010, C257SE21271, C257SE21274, C257SE21280

Reexamination Certificate

active

07863202

ABSTRACT:
An integrated circuit can be formed with a high-k dielectric layer. A first titanium oxide layer is deposited over a substrate using a first ALD process. A first metal oxide layer is also deposited over the substrate using a second ALD process. A second titanium oxide layer is deposited over the substrate using a third ALD process and a second metal oxide layer is deposited over the substrate using a fourth ALD process. The first and second metal oxides are preferably strontium oxide and/or aluminum oxide.

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