High dielectric constant material containing tantalum, process f

Details High dielectric constant material containing tantalum, process f High dielectric constant material containing tantalum, process f

1996-07-16

2000-10-10

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257410, 257411, H01L 2972

Patent

active

061304514

ABSTRACT:
A high dielectric constant material containing tantalum expressed by chemical formula Ta.sub.x O.sub.y N.sub.z, where x, y, and z are each a value which in total yield 1, z is 0.1 or higher but 0.625 or lower, y is 0 or higher but 0.6 or lower, and 0.4y and 0.6z in total equals to the value of x or lower, and a process for depositing a film of the material by means of chemical vapor deposition using Cp.sub.m Ta(N.sub.3).sub.n, where Cp represents cyclopentane, and m+n=5, or using a gaseous tantalum-containing organometallic compound, or by a means comprising plasma treatment under a gas containing nitrogen. Also claimed are a semiconductor device and a MOS transistor using the high dielectric film containing tantalum.

REFERENCES:
patent: 4535343 (1985-08-01), Wright et al.
patent: 4888246 (1989-12-01), Kuwata et al.
patent: 4947081 (1990-08-01), Ohiwa et al.
patent: 5248629 (1993-09-01), Muroyama

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